MT53E2G32D4DE-046 AUT:C vs MT53E2G32D4DE-046 对比

详细并排对比 MT53E2G32D4DE-046 AUT:C 出自 Micron Technology 和 MT53E2G32D4DE-046 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT53E2G32D4DE-046 AUT:C MT53E2G32D4DE-046 AUT:C - 64Gbit LPDDR4X DRAM | Micron

MT53E2G32D4DE-046 AUT:C - 64Gbit LPDDR4X DRAM | Micron

MT53E2G32D4DE-046 AUT:C ✓ 量产中
Micron Technology
MT53E2G32D4DE-046 MT53E2G32D4DE-046 - 64Gbit LPDDR4X SDRAM 2133MHz | Micron

MT53E2G32D4DE-046 - 64Gbit LPDDR4X SDRAM 2133MHz | Micron

MT53E2G32D4DE-046 ✓ 量产中

规格对比

参数 MT53E2G32D4DE-046 AUT:C MT53E2G32D4DE-046
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $31.50 $57.89
存储器类型 SDRAM - Mobile LPDDR4X Mobile LPDDR4X SDRAM
存储容量 64 Gbit 64 Gbit (8 GB)
存储组织 2G x 32 2G x 32
接口 Parallel Parallel
Clock Frequency 2.133 GHz 2133 MHz (2.133 GHz)
Access Time 3.5 ns —
封装 200-TFBGA (10 x 14.5 mm) 200-TFBGA (10 x 14.5 mm)
安装类型 Surface Mount Surface Mount
Bus Width 32 bit —
Grade Automotive (AUT) —
Die Revision C —
Supply Voltage VDD [DATA_NEEDED: VDD voltage] —
Supply Voltage VDDQ [DATA_NEEDED: VDDQ voltage] —
工作温度 [DATA_NEEDED: operating temperature range] —
Standby Current [DATA_NEEDED: standby current] 2 mA
Packaging [DATA_NEEDED: tray/reel quantity] —
RoHS 状态 Compliant Compliant
Access Time (Cycle) — 3.5 ns
数据速率 — 4266 MT/s max class (-046 speed bin per LPDDR4X interface)
Supply Voltage (VDD) — 1.06 V to 1.17 V
Operating Current (Idd) — 168 mA
Operating Temperature (WT grade) — -25C to +85C
Operating Temperature (AUT grade) — -40C to +125C
Operating Temperature (AIT grade) — -40C to +95C
特性 — Auto precharge, auto self-refresh, ZQ calibration, built-in temperature sensor, write leveling, data mask, asynchronous reset

数据手册与资源

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